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| Transys Electronics LIMITED SOT-523 Plastic-Encapsulated Diode DAN222 FEATURES: Power dissipation PD: 150 mW (Tamb=25) SWITCHING DIODE SOT-523 Collector current 100 mA IF: Collector-base voltage 80 V VR: Operating and storage junction temperature range TJ, Tstg: -55 to +150 CIRCUIT: 1 3 2 MARKING: N ELECTRICAL CHARACTERISTICS (Tamb=25 Symbol V(BR) IR VF CD trr unless Test otherwise specified) MIN 80 0.1 1.2 3.5 4 MAX UNIT V Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reverse recovery time conditions IR= 100A VR=70V IF=100mA A V VR=6V, f=1MHz VR=6V, IF=5mA pF ns |
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